PHW8N50E Подобна

  • PHW80NQ10T
    • 100 V, N-channel trenchMOS transistor
  • PHW80NQ10T
    • N-channel TrenchMOS transistor
  • PHW80NQ10T
    • N-channel TrenchMOS transistor
  • PHW80NQ10T
    • N-channel TrenchMOS transistor
  • PHW8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW8N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW8ND50E
    • 500 V, power MOS transistor FREDFET, avalanche energy rated

PHW8N50E Datasheet и Spec

Производител : Philips 

Опаковка : TO247 

Pins : 3 

Температурата : Мин -55 °C | Макс 150 °C

Размер : 98 KB

Заявление : PowerMOS transistor. Avalanche energy rated. 

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