Path:OKDatasheet > Полупроводникови Datasheet > Philips Datasheet > PHB9N60E
PHB9N60E спец.: PowerMOS transistor. Avalanche energy rated.
PHB9N60E Подобна
- PHB96NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB98N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB9N60E
- PowerMOS transistor. Avalanche energy rated.
- PHB9NQ20T
- N-channel TrenchMOS transistor
PHB9N60E Datasheet и Spec
Производител : Philips
Опаковка : SOT404
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 45 KB
Заявление : PowerMOS transistor. Avalanche energy rated.
PHB9N60E PDF Изтегли