| Част Не | Производител | Заявление |
|---|
| MT55L512L18PB-10IT | Micron | 512K x 18 ZBT SRAM, 10ns |
| MT48LC16M8A2TG-7E | Micron | 3.3V, 16Meg x 8-bit SDRAM, 7.5ns |
| MT4LC1M16E5DJ-5S | Micron | 1Meg x 16, 3.3V EDO DRAM |
| MT48LC32M4A2TG-7EL | Micron | 3.3V, 32Meg x 4-bit SDRAM, 7.5ns, low power |
| MT46V32M4-6 | Micron | 8 Meg x 4 x 4banks, 133MHz, CL=2.5 double data rate DDR SDRAM |
| MT48LC1M16A1TG-8A | Micron | 512 K x 16 x 2banks, 125MHz synchronous DRAM |
| MT28C3212P2NFL-10B | Micron | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory |
| MT48LC16M4A2TG-75 | Micron | 64Mb (4 Meg x 4 x 4 banks) SDRAM, 7.5ns |
| MT28F640J3FS-12ET | Micron | 64Mb Q-flash memory |
| MT28F800B3SG-9TET | Micron | 1Meg x 8; 3V only, dual supply, smart 3 boot block flash memory |
| MT46V64M8TG-75L | Micron | 32Meg x 4 x 4banks, CL=2.5, 133MHz double data rate (DDR) SDRAM |
| MT28F322P3FJ-70TET | Micron | 2Meg x 16 async/page/burst flash memory |
| MT28C3212P2FL-10T | Micron | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory |
| MT48LC4M32LFFF-8 | Micron | 1Meg x 32 x 4 banks; 125MHz synchronous DRAM |
| MT28F002B3VG-10TET | Micron | 256K x 8; 3V only, dual supply, smart 3 boot block flash memory |
| MT48LC2M32B2TG-55 | Micron | 512K x 32 x 4banks, 183MHz synchronous DRAM |
| MT55L256V32PB-6 | Micron | 256K x 32 ZBT SRAM, 6ns |
| MT46V16M8FJ-6T | Micron | 4 Meg x 8 x 4banks, 167MHz, CL=2.5 double data rate DDR SDRAM |
| MT58L1MY18DT-7.5 | Micron | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns |
| MT28F400B3SG-8TET | Micron | 512K x 8; 3V only, dula supply, smart 3 boot block flash memory |
| MT48LC32M8A2FB-75 | Micron | 8 Meg x 8 x 4banks, CL=3, 133MHz synchronous DRAM |
| MT55L512V18PT-6IT | Micron | 512K x 18 ZBT SRAM, 6ns |
| MT48LC32M4A2TG-8E | Micron | 32 Meg x 4 x 4banks, PC133, CL=2 SDRAM |
| MT28F642D18FN-704BET | Micron | 2Meg x 16; 40MHz async/page/burst flash memory |
| MT55L256L36PT-6IT | Micron | 256K x 36 ZBT SRAM, 6ns |
| MT4LC4M4B1TG-6S | Micron | 4Meg x 4, 3,3V FPM DRAM |
| MT28C3212P2NFL-10T | Micron | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory |
| MT4LC4M4E9DJ-6 | Micron | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns |
| MT28F400B3WG-8T | Micron | 512K x 8; 3V only, dula supply, smart 3 boot block flash memory |
| MT28S2M32B1LCTG-75 | Micron | 512K x 32 x 4banks, 133MHz syncflash memory |
