| Част Не | Производител | Заявление |
|---|
| MAX40-8.5C | MDE Semiconductor | 8.50V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW270A | MDE Semiconductor | 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-10D270K | MDE Semiconductor | 27V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
| SMCJ15 | MDE Semiconductor | 15.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-25S951K | MDE Semiconductor | 950V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| P6KE62 | MDE Semiconductor | 50.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-20D560K | MDE Semiconductor | 56V; max peak current3000A; metal oxide varistor. Standard D series 20mm disc |
| SMLJ51 | MDE Semiconductor | 51.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP17A | MDE Semiconductor | 17.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-14D241K | MDE Semiconductor | 240V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
| 30KW45 | MDE Semiconductor | 45.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE39A | MDE Semiconductor | 33.30V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-28.0C | MDE Semiconductor | 28.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMAJ36 | MDE Semiconductor | 36.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ18 | MDE Semiconductor | 18.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE33 | MDE Semiconductor | 26.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 3T150B | MDE Semiconductor | 140V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| SMAJ14 | MDE Semiconductor | 14.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-64.0C | MDE Semiconductor | 64.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-10D271K | MDE Semiconductor | 270V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| 1.5KE150A | MDE Semiconductor | 128.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| P4KE18A | MDE Semiconductor | 14.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE15 | MDE Semiconductor | 12.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 30KW288 | MDE Semiconductor | 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE300 | MDE Semiconductor | 243.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| P6KE47A | MDE Semiconductor | 40.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ70A | MDE Semiconductor | 70.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ85A | MDE Semiconductor | 85.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW28 | MDE Semiconductor | 28.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE39 | MDE Semiconductor | 31.60V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
