Path:okDatasheet > Полупроводникови Datasheet > JGD Datasheet > JGD-101

EZ43D P4KE16C SK110 HER108L SMAJ16CA 1A5G 1N4729A SK14 P6KE130C 1N4106C 2W08 SMBJ7.5 SMBJ5915 1N4744D 1N4731A 1N5913D P4KE10C 3EZ10D5 1N4133 ZMM55-D7V5 SF34G SMAJ17 SMBJ5939D ZMM5239D SMAJ70 1N5537B 1N4118C 3EZ120D1

JGD Схеми каталог-101

Част НеПроизводителЗаявление
ZMM55-C3V6 JGDSurface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-5% tolerance.
1N5931B JGD1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-5% tolerance.
3EZ43D JGD3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-20% tolerance.
P4KE16C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. Bidirectional.
SK110 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
HER108L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V.
SMAJ16CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. Bidirectional.
1A5G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 600V.
1N4729A JGD1W zener diode. Zener voltage 3.6V.
SK14 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 1.0 A.
P6KE130C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. Bidirectional.
1N4106C JGD500mW low noise silicon zener diode. Nominal zener voltage 12V. 2% tolerance.
2W08 JGDSingle phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800 V.
SMBJ7.5 JGDSurface mount transient voltage suppressor. Breakdown voltage 8.33 V (min), 10.3 V (max). Test current 1.0 mA.
SMBJ5915 JGD1.5W silicon surface mount zener diode. Zener voltage 3.9 V. Test current 96.1 mA. +-20% tolerance.
1N4744D JGD1W zener diode. Nominal zener voltage 15V. 1% tolerance.
1N4731A JGD1W zener diode. Zener voltage 4.3V.
1N5913D JGD1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-1% tolerance.
P4KE10C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 10 V. Bidirectional.
3EZ10D5 JGD3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-5% tolerance.
1N4133 JGD500mW low noise silicon zener diode. Nominal zener voltage 87V.
ZMM55-D7V5 JGDSurface mount zener diode, 500mW. Nominal zener voltage 7.0-7.9 V. Test current 5 mA. +-20% tolerance.
SF34G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 3.0 A.
SMAJ17 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V.
SMBJ5939D JGD1.5W silicon surface mount zener diode. Zener voltage 39 V. Test current 9.6 mA. +-1% tolerance.
ZMM5239D JGDSurface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-20% tolerance.
SMAJ70 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V.
1N5537B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-5% tolerance.
1N4118C JGD500mW low noise silicon zener diode. Nominal zener voltage 27V. 2% tolerance.
3EZ120D1 JGD3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-1% tolerance.

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