Path:okDatasheet > Полупроводникови Datasheet > IR Datasheet > IR-8
M IRG4PSC71K SD500R40PC 301URA120 ST2600C30R3L SD303C16S15C 47LF80 IRFZ48V IRF7822 ST180C20C1 SD103N04S20MSC ST280C06C0 ST300C08C3 309UR120P2 IRFBF30 SD153N04S10PBV IRGBF30F IRFI9634G IRKL50012 SD203R14S10PC SD233N30S50PSC IRKT43018 SD400N24PC ST2600C30R0 SD600N16MSC ST700C18L1 S
Част Не | Производител | Заявление |
---|---|---|
ST333S08PFM1 | IR | Inverter grade thyristor |
82RIA80M | IR | Phase control thyristor |
IRG4PSC71K | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A |
SD500R40PC | IR | Standard recovery diode |
301URA120 | IR | Standard recovery diode |
ST2600C30R3L | IR | Phase control thyristor |
SD303C16S15C | IR | Fast recovery diode |
47LF80 | IR | Standard recovery diode |
IRFZ48V | IR | Power MOSFET, 60V, 72A |
IRF7822 | IR | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 5.0mOhm |
ST180C20C1 | IR | Phase control thyristor |
SD103N04S20MSC | IR | Fast recovery diode |
ST280C06C0 | IR | Phase control thyristor |
ST300C08C3 | IR | Phase control thyristor |
309UR120P2 | IR | Standard recovery diode |
IRFBF30 | IR | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A |
SD153N04S10PBV | IR | Fast recovery diode |
IRGBF30F | IR | Insulated gate bipolar transistor |
IRFI9634G | IR | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 1.0 Ohm, ID = -4.1 A |
IRKL50012 | IR | Thyristor/diode and thyristor/thyristor |
SD203R14S10PC | IR | Fast recovery diode |
SD233N30S50PSC | IR | Fast recovery diode |
IRKT43018 | IR | Thyristor/diode and thyristor/thyristor |
SD400N24PC | IR | Standard recovery diode |
ST2600C30R0 | IR | Phase control thyristor |
SD600N16MSC | IR | Standard recovery diode |
ST700C18L1 | IR | Phase control thyristor |
ST3230C16R3L | IR | Phase control thyristor |
SD253N12S15MSV | IR | Fast recovery diode |
SD600N08MC | IR | Standard recovery diode |