Path:OKDatasheet > Полупроводникови Datasheet > HYNIX Datasheet > HY51VS18163HGJ-5
HY51VS18163HGJ-5 спец.: "Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns"
HY51VS18163HGJ-5 Подобна
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS18163HGJ-5 Datasheet и Spec
Производител : HYNIX
Опаковка : SOJ
Pins : 42
Температурата : Мин 0 °C | Макс 70 °C
Размер : 117 KB
Заявление : "Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns"
HY51VS18163HGJ-5 PDF Изтегли