| Част Не | Производител | Заявление |
|---|
| G9206-256W | Hamamatsu | Number of pixels256; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear near infrared (0.9 to 1.67um / 2.55um) image sensor |
| H6784-01 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| G9131-22 | Hamamatsu | Connector type FC; supply voltage 20V; InGaAs PIN photodiode with preamp mini-DIL type, 1.3/1.55um, 156, 622 Mbps/1.25, 2.5Gbps |
| R6351 | Hamamatsu | Spectral responce160-650nm; new compact type PMT |
| H7712-15 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| L7901-01 | Hamamatsu | 100kV; 10W; microfocus X-ray source |
| G7881-21 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| E989-26 | Hamamatsu | Magnetic shield case |
| F2224-24 | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
| C7883-20 | Hamamatsu | Supply voltage +12.0V; high -speed driver circuit for NMOS linear image sensor. |
| P1114-01 | Hamamatsu | Supply voltage100Vdc; 30mW; CdS photoconductive cell hermetically sealed for high reliability |
| P7752-10 | Hamamatsu | Active area 1x1mm; external input voltage+-18V; infrared detector module with preamplifier high sensitivity module of easy-to-use. For infrared detection |
| H7710-11 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| G9205-256W | Hamamatsu | Number of pixels256; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear near infrared (0.9 to 1.67um / 2.55um) image sensor |
| H5783-01 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| G8194-44 | Hamamatsu | Spectral response range0.9-1.7um; reverse voltage20V; InGaAs PIN photodiode receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH, WDM |
| L8763-62 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| C4258-02 | Hamamatsu | Infrared power supply; fast response of 50ps; active area 0.2mm x 0.2mm; picosecond photodetector |
| F2224-34P | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
| L8446-72 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| P5968-300 | Hamamatsu | 0.5Vdc; 100mW; InSb photovoltaic detector high speed response, low-noise photovoltaic detector |
| G8925-22 | Hamamatsu | Connector FC; 78mA; InGaAs PIN photodiode with preamp high-speed response 10Gbps, pigtail type. For optical fiber communications, SDH/SONET, WDM |
| G7151-16 | Hamamatsu | Active area 0.45x1mm; spectral response range0.9-1.7um; reverse voltage5V; InGaAs PIN photodiode array 16-element array. For near infrared (NIR) spectrophotometer |
| L6486 | Hamamatsu | Forward current80mA; 3V; infrared LED. For auto-focus |
| R375 | Hamamatsu | Spectral responce160-850nm; 1500Vdc; 0.1mA; photomultiplier tube |
| H8249-101 | Hamamatsu | Input voltage 11.5-15.5V; max input current50mA; side-on PMT photosensor module |
| G8371-01 | Hamamatsu | Reverse voltage2V; spectral response range0.9-1.7um; InGaAs PIN photodiode long wavelength type. For NIR (near infrared) photometry, optical power meter, gas analyzer |
| L7055-04 | Hamamatsu | 30A; 2V; 40W; high-power infrared pulsed laser diode. For laser radar, range finder, excitation light source, optical trigger, security barrier |
| G9206-256W | Hamamatsu | Number of pixels256; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear near infrared (0.9 to 1.67um / 2.55um) image sensor |
| H6784-01 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
