Path:okDatasheet > Полупроводникови Datasheet > Diodes Datasheet > Diodes-46
TZX5V1D 10A05 FR801 ZPU120 SB180 ZM4756A P4KE10C DDTC115GKA GBU410 DDC114EU 1N4001L P4KE82C 1N5364B AZ23C5V6W GBU604 MMBZ5237BW SMBJ10(C)A P4KE150C P4KE8.2CA DDTC143XE PR1505GS MMBZ5230BTS PR1006G BC807-40 TZX4V7A ZPY4.7 DDTA123EUA
Част Не | Производител | Заявление |
---|---|---|
BAW56-7 | Diodes | 100V; dual surface mount switching diode. For general purpose switching applications |
ZPD1 | Diodes | 0.7-0.8V silicon planar zener diode |
TZX22A | Diodes | 20.9-21.9V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current |
TZX5V1D | Diodes | 5.1-5.3V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current |
10A05 | Diodes | 600V; 10A rectifier; high current capability and low forward voltage drop |
FR801 | Diodes | 50V; 8.0A fast recovery rectifier |
ZPU120 | Diodes | 107-134V silicon power zener diode |
SB180 | Diodes | 80V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection apllication |
ZM4756A | Diodes | 47V; 1W surface mount zener diode |
P4KE10C | Diodes | 8.10V; 400W transient voltage suppressor |
DDTC115GKA | Diodes | 50V; 100mA NPN PRE-biased small signal surface mount transistor |
GBU410 | Diodes | 1000V; 4.0A glass passivated bridge rectifier |
DDC114EU | Diodes | 50V; 50mA NPN PRE-biased small signal dual surface mount transistor |
1N4001L | Diodes | 50V; 1.0A rectifier; high current capability and low forward voltage drop |
P4KE82C | Diodes | 66.40V; 400W transient voltage suppressor |
1N5364B | Diodes | 30V 5W zener diode |
AZ23C5V6W | Diodes | 5.6V; 200mW dual surface mount zener diode. Ideal for transient suppression |
GBU604 | Diodes | 400V; 6.0A glass passivated bridge rectifier |
MMBZ5237BW | Diodes | 8.2V; 200mW surface mount zener diode. General purpose. Ideally suited for automated assembly processes |
SMBJ10(C)A | Diodes | 10V; 600mW surface mount transient voltage suppressor |
P4KE150C | Diodes | 128.00V; 400W transient voltage suppressor |
P4KE8.2CA | Diodes | 7.02V; 400W transient voltage suppressor |
DDTC143XE | Diodes | 50V; 100mA NPN PRE-biased small signal surface mount transistor |
PR1505GS | Diodes | 600V; 1.5A fast recovery glass passivated rectifier; fast switching for high efficiency |
MMBZ5230BTS | Diodes | 4.7V; 200mW triple surface mount zener diode array. Ideally suited for automated assembly |
PR1006G | Diodes | 800V; 1.0A fast recovery glass passivated rectifier; fast switching for high efficiency |
BC807-40 | Diodes | 45V; PNP surface mount transistor. For switching and AF amplifier applications |
TZX4V7A | Diodes | 4.4-4.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current |
ZPY4.7 | Diodes | 4.4-5.0V silicon planar zener diode |
DDTA123EUA | Diodes | 50V; 100mA PNP PRE-biased small signal surface mount transistor |